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在Ni催化剂的存在下,通过SiCl4的水解氨解反应并在1300℃氨气气氛中进行热氮化处理制得了无定形氮氧化硅纳米线。产物经X射线衍射(XRD)、热重-差示扫描量热(TG-DSC)、扫描电镜(SEM)、透射电镜(TEM)、能量色散谱(EDS)和选区电子衍射(SAED)等表征手段进行分析,结果表明纳米线为无定形结构,直径为100-150nm。在波长为220nm的光激发下,产物的光致发光光谱(PL)在563nm和289nm处分别出现了一个强的绿光发光峰和一个弱的紫光发光峰。对纳米线的生长机理进行分析,表明纳米线的生长遵循气-液-固(VLS)机制控制模式。
Amorphous silicon oxynitride nanowires were prepared by hydrolytic ammonolysis of SiCl4 and thermal nitriding in an ammonia atmosphere at 1300 ° C in the presence of a Ni catalyst. The products were characterized by XRD, TG-DSC, SEM, TEM, EDS and SAED Means analysis, the results show that nanowires are amorphous structure, a diameter of 100-150nm. The photoluminescence spectrum (PL) of the product shows a strong green emission peak and a weak violet emission peak at 563nm and 289nm respectively under the excitation of light with a wavelength of 220nm. The growth mechanism of nanowires was analyzed, showing that the growth of nanowires follows the VLS mechanism.