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采用超高真空化学气相淀积系统,以高纯Si2H6和GeH4作为生长气源,用低温缓冲层技术在Si(001)衬底上成功生长出厚的纯Ge外延层.对Si衬底上外延的纯Ge层用反射式高能电子衍射仪、原子力显微镜、X射线双晶衍射曲线和Ra-man谱进行了表征.结果表明在Si基上生长的约550nm厚的Ge外延层,表面粗糙度小于1nm,XRD双晶衍射曲线和Ra-man谱Ge-Ge模半高宽分别为530″和5.5cm-1,具有良好的结晶质量.位错腐蚀结果显示线位错密度小于5×105cm-2.可用于制备Si基长波长集成光电探测器和Si基高速电子器件.
Using ultra-high vacuum chemical vapor deposition system, high pure Si2H6 and GeH4 were used as growth gas source, and a thick pure Ge epitaxial layer was successfully grown on Si (001) substrate by low temperature buffer layer technology. The pure Ge layer was characterized by reflection high energy electron diffraction, atomic force microscopy, X-ray double crystal diffraction and Ra-man spectroscopy.The results show that the Ge epitaxial layer with a thickness of about 550nm grown on Si substrate has a surface roughness less than 1nm. The FWHM of the XRD and Ge-Ge modes of the Ra-man spectrum were 530 "and 5.5cm-1, respectively, showing good crystal quality. Dislocation corrosion results showed that the dislocation density was less than 5 × 105cm-2 Can be used to prepare Si-based long wavelength integrated photodetector and Si-based high-speed electronic devices.