本工作用卢瑟福背散射研究了离子束混合方法形成硅化钨的条件。通过对热烧结和离子束混合法的比较,结合X射线衍射分析相结构的结果,指出离子束混合法可降低形成二硅化钨所需的退火温度。观察到氧杂质对形成条件的影响,简单讨论了离子束混合形成硅化物的机理。 This work using Rutherford backscatter ion beam mixing method to form the conditions of tungsten silicide. By comparing the results of thermal sintering and ion beam mixing, and analyzing the phase structure by X-ray diffraction, it is pointed out that the ion beam mixing method can reduce the annealing temperature required for the formation of tungsten disilicide. The effect of oxygen impurities on the formation conditions was observed, and the mechanism of ion beam mixing to form silicide was briefly discussed.