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本文利用光电容和光电流瞬态技术结合 DLTS 测量对P和N型掺金硅(不同补偿比K=N_(Au)/N_s=0.02～0.9)中金施主和受主的行为进行了全面、系统地实验研究.得到如下结果:1.进一步证实了硅中金施主和受主是同一个缺陷的两个不同能态(Au~(+/0)和Au~(0/-)).2.金受主和施主对应的深中心不是金同浅杂质的络合物(Au-Ds).3.实验结果拟合运算得到的金施主电子和空穴光电离截面阈值能量之和基本等于硅的禁带宽度表明:载流子通过金施主激发和俘获时不存在明显的晶格弛豫效应.金受主空穴光电离截面阈值能量大的温度依赖关系可能与空穴通过金受主激发态的光热激发相关.此外,本文还研究了接近阈值能量附近的金施主和受主能级光发射率的电场依赖关系.
In this paper, photolithography and photocurrent transient techniques combined with DLTS measurements were used to conduct a comprehensive and systematic review of the donor and acceptor behavior of P and N doped gold (different compensation ratios K = N Au / N_s = 0.02 ~ 0.9) The results are as follows: 1. It is further confirmed that the donors and donors in silicon are two different energy states (Au ~ (+ / 0) and Au ~ (0 /)) with the same defect.2. The gold donor and donors corresponding to the deep center is not a gold-gold complex impurity (Au-Ds) .3 Experimental results The fitting calculated gold donor electron and hole photoionization cross-section threshold energy is substantially equal to the silicon The bandgap shows that there is no obvious lattice relaxation effect when charge carriers are excited and captured by gold donor.The large temperature dependence of the threshold energy of photo acceptor hole in gold acceptor hole may be related to the hole acceptor excited by gold In addition, we also study the electric field dependency of the optical donor and acceptor levels near the threshold energy.