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The CuInSe2 compound was prepared by selenization of Cu-In precursor,which was ultrasonic electrodeposited at constant current.CuInSe2 films were compacted to improve surface morphology.The films were characterized by X-ray diffractometry(XRD),scanning electron microscopy(SEM),and energy dispersive spectroscopy(EDS).It is indicated that ideal stoichiometric CuInSe2 films can be obtained by the selenization of Cu-In precursor deposited at a current density of 20 mA/cm2.Single-phase CuInSe2 is formed in the selenization process,and it exhibits preferred orientation along the(112) plane.The CuInSe2 films with smooth surface can be obtained under the pressure of 500 MPa at 60 °C.
The CuInSe2 compound was prepared by selenization of Cu-In precursor, which was subjected to ultrasonic electrodeposited at constant current. CuInSe2 films were compacted to improve surface morphology. The films were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). It is indicated that ideal stoichiometric CuInSe2 films can be obtained by the selenization of Cu-In precursor deposited at a current density of 20 mA / cm2.Single-phase CuInSe2 is formed in the selenization process, and it exhibits preferred orientation along the (112) plane. The CuInSe2 films with smooth surface can be obtained under the pressure of 500 MPa at 60 ° C.