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介绍了InGaN单量子阱超高亮度蓝色LED的结构和性能,其发光强度、峰值波长和光谱半宽在正向电流为20mA时,分别为8cd、450nm和25nm。
The structure and performance of InGaN single quantum well ultra-high brightness blue LED are introduced. The luminescence intensity, peak wavelength and half width of spectrum are 8cd, 450nm and 25nm respectively when the forward current is 20mA.