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使用普通的直拉法生产单晶硅将形成大量氧复合体。高温处理硅时,这些氧杂质的存在能导致各种各样的晶体缺陷。然而,通过精心的控制热处理过程,就能够控制氧的沉淀量,从而最终达到改善硅片的质量。
The use of ordinary Czochralski method to produce monocrystalline silicon will form a large number of oxygen complexes. The presence of these oxygen impurities can lead to a variety of crystal defects when silicon is treated at high temperatures. However, by carefully controlling the heat treatment process, it is possible to control the amount of oxygen precipitated and finally to improve the quality of the wafer.