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采用无质量分析器的离子注入机,以低能量低剂量注水的方式代替常规SIMOX注氧制备SOI材料。测试结果表明,此技术成功地制备了界面陡峭、平整,表层硅单晶质量好的SOI结构材料。在剂量一定的条件下,研究不同注入能量对SOI结构形成的影响,使用剖面透射电镜技术(XTEM)和二次离子质谱技术(SIMS)等测试方法对注入样品和退火后样品进行分析。结果表明,表层硅厚度随注入能量增大不断增大;埋层二氧化硅厚度相对独立,仅在超低能(50keV)低剂量情况下厚度出现明显降低;埋层质量(包括界面平整度、硅岛密度等)与注入能量变化相关。
The ion implanter without mass analyzer was used to replace the conventional SIMOX oxygen injection to prepare SOI material with low energy and low dosage water injection. The test results show that this technology successfully prepared a steep, flat surface silicon crystal quality SOI structural material. The influence of different implantation energies on the formation of SOI structure was investigated under certain dose conditions. The injected and annealed samples were analyzed by cross-sectional TEM and SIMS. The results show that the thickness of surface silicon increases with the increase of implantation energy. The thickness of buried silicon dioxide is relatively independent, and the thickness of buried silicon oxide decreases obviously only at low dose of 50 keV. The quality of buried layer (including interface flatness, Island density, etc.) is related to the change of implantation energy.