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通过对比蓝宝石(Al2O3),SiC,Si,ZnO衬底与三种非常规氧化物衬底即LiGaO2,MgAl2O4和LaAlO3衬底上外延生长GaN薄膜的优缺点,指出了在这几种氧化物衬底上生长GaN薄膜所具有的独特优势;针对氧化物衬底上生长GaN薄膜的问题,提出了相应的解决方法,进而明确指出了研究非常规氧化物衬底的重要意义。在此基础上,详细介绍了在三种氧化物衬底上生长高质量GaN薄膜的方法及研究进展,为高晶体质量GaN薄膜的生长及Ⅲ族氮化物半导体器件的应用研究、特别是基于非常规氧化物衬底的研究起到很好的指导意义。
By comparing the advantages and disadvantages of epitaxial growth of GaN films on sapphire (Al 2 O 3), SiC, Si, ZnO substrates and three unconventional oxide substrates, namely LiGaO 2, MgAl 2 O 4 and LaAlO 3 substrates, On the growth of GaN film has the unique advantages; for the growth of GaN oxide film substrate, the corresponding solution, and then clearly pointed out the significance of unconventional oxide substrate. On this basis, the methods and research progress of high quality GaN thin films grown on three kinds of oxide substrates are introduced in detail, and the research on the growth of GaN films with high crystal quality and the application of group III nitride semiconductor devices is made. Especially, The study of the oxide substrate plays a very good guiding role.