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本文利用Er和硅离子共注入热氧化SiO2薄膜的方法制备出Er离子掺杂的含纳米硅微晶的SiO2发光薄膜,在此基础上制备出ITO/SiON/Si-rich SiO2:Er/Si MOS结构电致发光器件,比较研究了硅微晶密度的变化对于MOS结构的电致发光和光致发光特性的影响。随着纳米硅微晶的增多,Er离子在1.54μm处的红外光致发光显著增强,显示出纳米硅微晶对Er离子光致发光的敏化作用。相反,对于电致发光来说,增加纳米硅微晶数量的同时也增加了SiO2薄膜中的电子俘获陷阱,电子在纳米硅微晶之间的隧穿降低了过热电子的数量和平均能量,因而降低了碰撞激发Er离子产生的电致发光效率。
In this paper, Er-doped SiO2 thin films containing nanocrystalline silicon were prepared by co-implantation of Er and Si ions into SiO2 film. On the basis of this, ITO / SiON / Si-rich SiO2: Er / Si MOS Structure electroluminescent device, the influence of the change of the density of the microcrystalline silicon on the electroluminescent and photoluminescent characteristics of the MOS structure is comparatively studied. With the increase of nano-silicon crystallites, the infrared photoluminescence of Er ions at 1.54μm was significantly enhanced, showing the sensitization effect of nano-silicon crystallites to Er-ion photoluminescence. In contrast, for electroluminescence, increasing the number of nanocrystalline silicon crystallites also increases the electron trapping trap in the SiO2 film, and the tunneling of electrons between the nanocrystalline silicon crystallites reduces the number and average energy of overheated electrons, thus Electroluminescence efficiency of collision-excited Er ions is reduced.