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日前,Vishay Intertechnology,Inc.宣布,推出采用超小尺寸的热增强PowerPAKSC-70封装的新款双片N沟道TrenchFET功率MOSFET。Vishay Siliconix SiA936EDJ可在便携式电子产品中节省空间并提高电源效率,在4.5V和2.5V栅极驱动下具有20V(12VVGS和8VVGS)器件中最低的导通电阻,占位面积为2mm×2mm。
Vishay Intertechnology, Inc. today announced the release of the new dual-channel N-channel TrenchFET ™ power MOSFET in an ultra-small thermally enhanced PowerPAK® SC-70 package. Vishay Siliconix SiA936EDJ saves space and improves power efficiency in portable electronics with the lowest on-resistance of 20V (12VVGS and 8VVGS) devices in a 4.5V and 2.5V gate drive footprint of 2mm x 2mm.