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对碳纳米管(CNT)膜的压阻效应进行了研究.实验所用的碳纳米管用热灯丝气相沉积法(CVD)合成,压阻效应用3点弯曲法测量.研究发现:在室温下与500微应变时,碳纳米管膜的压阻因子至少是65,超过多晶硅(Si)在35℃时的压阻因子30.并且,碳纳米管膜的压阻因子随温度的升高而变大.还讨论了碳纳米管膜出现压阻效应的机制.
The piezoresistive effect of carbon nanotubes (CNT) films was investigated.The carbon nanotubes used in the experiment were synthesized by hot filament vapor deposition (CVD) and the piezoresistive effect was measured by 3-point bending method.It was found that at room temperature, At micro-strain, the carbon nanotube film has a piezoresistive factor of at least 65, which exceeds the piezoresistive factor of polysilicon (Si) at 35 ° C. The piezoresistive factor of the carbon nanotube film increases with increasing temperature. The mechanism of piezoresistive effect on carbon nanotube films is also discussed.