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采用离子液体电沉积技术以ITO玻璃为基片以0.1mol/L Si Cl4+Ge Cl4的离子液体Py1.4Tf2N混合溶液作为电解液,利用循环伏安扫描法确定Si、Ge在离子液体中的共还原电位,完成Si、Ge的共沉积,制备出SixGe1-x薄膜.并对其电化学沉积机理进行分析.利用X射线衍射仪(XRD)、扫描探针显微镜(SPM)、拉曼光谱(Raman)对样品的结构、表面进行了测量和分析.
An ionic liquid electrodeposition technique was used to fabricate ITO glass as the electrolyte with 0.1 mol / L Si Cl4 + Ge Cl4 ionic liquid Py1.4Tf2N as the electrolyte. The cyclic voltammetry was used to determine the total content of Si and Ge in the ionic liquid XRD, SPM and Raman spectra were used to fabricate SixGe1-x thin films by co-deposition of Si and Ge. The structure and surface of the sample were measured and analyzed.