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对制备的Ni/4H-SiC肖特基势垒二极管(SBD)进行了γ射线辐照试验,并在辐照过程中对器件分别加0和-30V偏压.经过1Mrad(Si)总剂量的γ射线辐照后,不同辐照偏压下的Ni/4H-SiC肖特基接触的势垒高度和理想因子没有退化,SiC外延层中的少子寿命也没有退化.辐照后器件的反向电流下降,这是由于器件表面的负界面电荷增加引起的.研究表明,辐照偏压对Ni/4H-SiCSBD的辐照退化效应没有明显的影响.
The prepared Ni / 4H-SiC Schottky barrier diode (SBD) was subjected to γ-ray irradiation test and subjected to 0 and -30 V bias voltage respectively during irradiation. After a total dose of 1 Mrad (Si) After the γ-ray irradiation, the barrier heights and ideality factors of the Ni / 4H-SiC Schottky contact under different irradiation bias did not degenerate, and the lifetime of the minority carriers in the SiC epitaxial layer did not degrade. Current decrease due to the increase of negative interface charge on the device surface.The research shows that irradiation bias has no obvious effect on the radiation degeneration effect of Ni / 4H-SiCSBD.