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用5N In,5N或6N Sb,光谱纯Ni,掺入5N Te 6×10~(16)/cm~3和不掺Te的InSb-NiSb共晶复合材料,G=125±5℃/cm,不同凝固速度(R)的试样,测试它们垂直和顺NiSb纤维方向的电导率以及垂直纤维方向的霍耳电压,求出霍耳系数R_Ⅱ,载流子浓度n,杂质浓度N和霍耳迁移率μ_Ⅱ。不论掺Te与否,导电类型皆为n-型,原料中带入n-型杂质。电导率有方向性,σ_11>σ_1,掺Te共晶的电导率大于未掺Te者。凝固速度增大时,掺Te共晶的σ,n,N增大不明显,因而μ_Ⅱ下降程度较小;而未掺Te共晶的σ,n,N随R增大而增大比较明显,因而其μ_H随R增大而减小较显著。掺Te共晶的μ_Ⅱ比未掺Te的小。
5N Te, 5N or 6N Sb and pure Ni were doped with 5N Te 6 × 10 16 / cm 3 and undoped InSb-NiSb eutectic composite with G = 125 ± 5 ℃ / cm, The samples with different solidification rates (R) were tested for their conductivity perpendicular to the direction of the NiSb fiber and the Hall voltage in the direction of the vertical fibers. The Hall coefficient R_II, the carrier concentration n, the impurity concentration N and the Hall mobility μ_Ⅱ. Whether doped with Te or not, the conductivity types are n-type, n-type impurities into the raw materials. Conductivity directional, σ_11> σ_1, doped with Te eutectic conductivity greater than those without Te. When the solidification rate increases, the σ, n and N of Te-doped eutectic are not obviously increased, so the decrease of μ_Ⅱ is small. However, the σ, n and N of Te-doped eutectic increase more obviously with the increase of R, Therefore, the decrease of μ_H with R increases. Μ_Ⅱ doped with Te eutectic is smaller than that without Te.