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We have investigated the preparation and properties of Bi3.4Ce0.6Ti3O12 thin films. The Bi3.4Ce0.6Ti3O12 thin films were fabricated on the Pt/Ti/SiO2/Si substrates using sol-gel method. The structure and morphology of the films were characterized us- ing X-ray diffraction and atomic force microscopy. The thin films showed a perovskite phase and dense microstructure. The dielectric constant and the dissi- pation factor of the Bi3.4Ce0.6Ti3O12 thin films were about 172 and 0.031 at 1 kHz, respectively. The 2Pr and 2Ec of the Bi3.4Ce0.6Ti3O12 thin films were 67.1 μC/cm2 and 299.7 kV/cm, respectively, under an applied field of 600 kV/cm. The Bi3.4Ce0.6Ti3O12 film did not show fatigue up to 4.46×109 switching cycles at a frequency of 1 MHz, and showed good insulating behavior according to the test of leakage current.
We have investigated the preparation and properties of Bi3.4Ce0.6Ti3O12 thin films. The Bi3.4Ce0.6Ti3O12 thin films were fabricated on the Pt / Ti / SiO2 / Si substrates using sol-gel method. The structure and morphology of the films were The thin films showed a perovskite phase and dense microstructure. The dielectric constant and the dissi- pation factor of the Bi3.4Ce0.6Ti3O12 thin films were about 172 and 0.031 at 1 kHz , respectively. The 2Pr and 2Ec of the Bi3.4Ce0.6Ti3O12 thin films were 67.1 μC / cm2 and 299.7 kV / cm, respectively, under an applied field of 600 kV / cm. The Bi3.4Ce0.6Ti3O12 film did not show fatigue up to 4.46 × 109 switching cycles at a frequency of 1 MHz, and showed good insulating behavior according to the test of leakage current.