基于 MOSFET热载流子可靠性物理 ,并结合电应力条件下热载流子退化特征量ΔIds/Ids0 、Isub等实测数据的拟合处理 ,发展了可表征退化物理意义的衬底电流与退化 /寿命参数提取模型 ;进而由自动测试 ATE与 CAD技术相结合的监测系统 ,实现了载流子速度饱和临界电场Ecrit、有效导电长度 LC和寿命因子 H、m、n提取 .实验研究结果表明 ,模型及提取参数合理可信 ,并可进一步应用于 MOSFET及其电路的退化 /寿命模拟预测 Based on the MOSFET hot carrier reliability physics and the fitting of the measured data of the hot carrier degradation features ΔIds / Ids0 and Isub under electric stress conditions, the substrate current and degeneration / Lifetime parameter extraction model, and then the automatic critical ATE and CAD technology combined with the monitoring system to achieve the carrier saturation speed critical electric field Ecrit, effective length of life LC and life factor H, m, n extraction.Experimental results show that the model And extraction parameters reasonable and credible, and can be further applied to the degradation of the MOSFET and its circuit / life simulation forecast