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Based on the integral method of single event upset(SEU) rate and an improved charge collection model for ultra-deep submicron complementary metal-oxide-semiconductor(CMOS) devices, three methods of SEU rate calculation are verified and compared. The results show that the integral method and the figure of merit(FOM) methods are basically consistent at the ultra-deep submicron level. By proving the validity of the carrier collection model considering charge sharing, the applicability of two FOM methods is verified, and the trends of single-bit and multiple-bit upset rates for ultra-deep submicron CMOS are analyzed.
Based on the integral method of single event upset (SEU) rate and an improved charge collection model for ultra-deep submicron complementary metal-oxide-semiconductor (CMOS) devices, three methods of SEU rate calculation are verified and compared. the integral method and the figure of merit (FOM) methods are basically consistent at the ultra-deep submicron level. By proving the validity of the carrier collection model considering charge sharing, the applicability of two FOM methods is verified, and the trends of single -bit and multiple-bit upset rates for ultra-deep submicron CMOS are analyzed.