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用直流磁控溅射法在室温的Si(100)基底上制备了21～55nm范围内不同厚度的铝膜,并用X射线衍射和扫描电镜对薄膜的结构和表面形貌进行了表征。分析结果表明:制备的铝薄膜呈多晶状态,晶粒择优取向为(111),随着膜厚的增加,Al(100)衍射峰宽变窄,薄膜的平均晶粒尺寸逐渐增大,晶面间距逐渐减小,薄膜中的残余应力减小。膜厚为55nm时,Al膜均匀致密。
Aluminum films with different thickness in the range of 21-55 nm were prepared on Si (100) substrate at room temperature by DC magnetron sputtering. The structure and surface morphology of the films were characterized by X-ray diffraction and scanning electron microscopy. The results show that the as-prepared aluminum film is polycrystalline and the preferred orientation of the grains is (111). The diffraction peak of Al (100) becomes narrower and the average grain size of the film gradually increases with the increase of film thickness. As the surface spacing decreases, the residual stress in the film decreases. When the film thickness is 55 nm, the Al film is uniformly dense.