加速应力试验是评价长期贮存一次性使用半导体器件贮存可靠性的最重要途径之一。针对半导体器件不同的失效机理,选择合理、准确的加速应力模型,是定量分析半导体器件贮存寿命的基础。介绍了半导体器件在长期贮存时的主要失效机理及其加速应力模型,给出了这些模型的适用条件。 Accelerated stress testing is one of the most important ways to evaluate the reliability of long-term storage of semiconductor devices for single-use storage. Aiming at the different failure mechanisms of semiconductor devices, choosing a reasonable and accurate accelerated stress model is the basis for quantitatively analyzing the storage life of semiconductor devices. The main failure mechanisms and accelerating stress models of semiconductor devices during long-term storage are introduced. The applicable conditions of these models are given.