SiO2 glass films doped with GeO2 were prepared by the flame hydrolysis deposition method, then annealed at 1200. C. After exposure to high pressure hydrogen, the as-deposited films were irradiated with excimer laser pulses operated at 248nm. The induced refractive index change (the growth of index change was 0.33%) was measured by a spectroscopic ellipsometer. A waveguide array has been written in the film by irradiation through a phase mask.