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随着器件尺寸朝亚微米规模、超大规模方向发展,常规的湿法腐蚀技术已无法满足要求。这里的器件制作全部采用正性光致抗蚀剂、接触式曝光和反应离子刻蚀制作方法。容易重复获得约0.6μm的发射区条宽,4μm周期的发射极排列密度,条宽和条距均为1μm的梳状金属电极图形,而且该金属具有足够的W、Au厚度,保证器件在C、X波段有良好的高频特性及抗电冲击能力。
With the device size toward the sub-micron scale, large scale development, the conventional wet etching technology has been unable to meet the requirements. All of the device fabrication here uses positive photoresist, contact exposure, and reactive ion etching. It is easy to repeatedly obtain a comb-like metal electrode pattern with an emitter strip width of about 0.6 μm, an emitter array density of 4 μm, a strip width and a strip pitch of 1 μm, and the metal has sufficient W and Au thicknesses to ensure that the device is in the C , X-band has good high-frequency characteristics and resistance to electric shock.