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1.前言圆柱形镍铁磁膜记忆元件的磁通沿圆柱周线形成闭合磁路,这样便没有退磁场的问题,故可研制实用的厚磁膜。随着磁膜厚度的增加,输出讯号幅度也随之增大,在讯号幅度和所要求的读出驱动脉冲上升时间之间进行权衡,从而可降低对上升时间的要求。在读出上升时间为20毫微秒时,得到的讯号幅度大于±15毫伏。与薄磁膜相比,速度要差一些,但却有可能构成大容量存储器。实际上,由于系统延迟时间较长,尽管薄膜的开关时间很短,
1. Introduction Cylindrical nickel ferromagnetic film memory element magnetic flux along the cylindrical circumference to form a closed magnetic circuit, so there is no demagnetization problem, it can develop practical thick magnetic film. As the thickness of the magnetic film increases, the amplitude of the output signal also increases, balancing the signal amplitude with the required rise time of the read drive pulse, thereby reducing the rise time requirement. With a readout rise time of 20 nanoseconds, the resulting signal amplitude is greater than ± 15 millivolts. Compared with the thin magnetic film, the speed is worse, but it is possible to form a large capacity memory. In fact, due to the system delay time is longer, although the membrane switch time is very short,