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提出了一种新型的MTCMOS电路结构。该结构在Tri-Mode MTCMOS电路基础上,结合叠加门控技术,进行电路结构改进,解决了Tri-Mode MTCMOS电路结构在高电压情况下抑制地线反弹噪声效果不明显的问题。电路采用SMIC 0.18μm CMOS工艺设计,使用HSPICE进行仿真。仿真结果表明,该结构与传统的MTCMOS电路相比,平均地线反弹减少约70%,比TriMode MTCMOS结构提高15%以上,特别在高电压情况下,平均提升40%。
A new type of MTCMOS circuit structure is proposed. Based on the Tri-Mode MTCMOS circuit, the structure improves the circuit structure based on the Tri-Mode MTCMOS circuit, and solves the problem that the Tri-Mode MTCMOS circuit structure has no obvious effect of suppressing the ground bounce noise under high voltage conditions. The circuit is designed using a SMIC 0.18μm CMOS process and simulated using HSPICE. The simulation results show that the average ground-line bounce is reduced by about 70% compared with the conventional MTCMOS circuit, which is more than 15% higher than the TriMode MTCMOS structure, especially with high voltage.