本文依据位错的弹性理论建立了半导体锗中 6 0°棱位错模型 ,用Recursion方法计算包含与不包含位错时原子团平均态密度、位错芯及其近邻原子的局域态密度、轨道电子数及原子价 ,得出了锗中 6 0°棱位错附近的局域电子结构 ,并讨论了其对锗光学和电学性质的影响。 Based on the dislocation elastic theory, a 6 0 ° edge dislocation model for semiconductor germanium was established. The Recursion method was used to calculate the average density of atomic clusters with or without dislocations, the local density of dislocation cores and their neighboring atoms, Number and atomic valence, the local electronic structure in the vicinity of 6 0 ° edge dislocation in germanium was obtained, and its influence on the optical and electrical properties of germanium was discussed.