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采用直流磁控溅射的方法在普通玻璃上制备了低价的氧化钒薄膜,在氧气和氩气混合气氛中,对所制备的薄膜进行不同时间的热处理,得到具有相变特性的VO2薄膜。分别利用X射线衍射(XRD)和场发射扫描电镜(SEM)分析了薄膜的组分、结晶结构和表面形貌,利用四探针法测试了薄膜的电阻。结果表明:热处理前的氧化钒薄膜主要成分为V2O3,经过热氧化处理后,低价的氧化钒被氧化,薄膜中VO2含量增加,薄膜发生金属-半导体相变,其中450℃、2h为最佳处理参数,其电阻相变幅度超过2个数量级,薄膜的相变温度仅为30℃。
A low-cost vanadium oxide film was prepared on ordinary glass by direct-current magnetron sputtering. The films were heat-treated at different times in a mixed atmosphere of oxygen and argon to obtain a VO2 thin film with phase transition characteristics. The composition, crystal structure and surface morphology of the films were characterized by X-ray diffraction (XRD) and field emission scanning electron microscope (SEM) respectively. The resistance of the films was measured by four-probe method. The results show that the main component of the vanadium oxide film before heat treatment is V2O3. After the thermal oxidation, the vanadium oxide is oxidized at a low price, and the VO2 content in the film increases. The metal-semiconductor phase transition occurs at 450 ℃ and 2h Processing parameters, the resistance phase change more than two orders of magnitude, the phase transition temperature of the film is only 30 ℃.