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在集成电路中,多层布线一般应用溅射铝膜加工而成,但在较高的集成度情况下,在很细的线条内,却会因通过高的电流密度而引起接触孔上铝层的退化和断裂。1991年11月美国《Semiconductor International》杂志介绍了日本日立公司研制的新的高熔金属钨(熔点3380℃)代替铝作为多层布线金属的方法,解决了这一问题。钨除了熔点高以外,稳定性亦佳,电流密度
In integrated circuits, multi-layer wiring is generally processed using sputtered aluminum film processing, but in the case of higher integration, in very thin lines, but due to the high current density caused by the contact hole on the aluminum layer Degeneration and fracture. November 1991 The United States “Semiconductor International” magazine solved the problem by introducing a new high-melting tungsten metal (melting point 3380 ° C) developed by Japan’s Hitachi Ltd. instead of aluminum as a multilayer wiring metal. In addition to high melting point of tungsten, the stability is also good, the current density