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采用恒电位诱导组装法,在40℃、2.5V恒电位条件下,在FTO导电玻璃上制备硅薄膜,并分别通过循环伏安曲线(CV)、红外光谱仪、扫描电子显微镜(SEM)、紫外-可见分光光度计和荧光光谱仪对硅薄膜的生长条件、结构、形貌和光学性能进行了系统研究。结果表明,只有当溶液中用于模板剂的十六烷基三甲基溴化铵(CTAB)的浓度高于其临界胶束浓度并且在一定的正硅酸四乙酯(TEOS)浓度时,才可以得到岛粒状的硅薄膜。由荧光光谱可知,组装成的硅薄膜经过焙烧,可生成氧缺位的SiOx薄膜,其中x≤2。由于氧缺位,在3.8eV光的激发下有2.5eV的光致发光。
The thin films of silicon were prepared on FTO conductive glass by potentiostatic induction assembly method at 40 ℃ and 2.5V potentials. The films were characterized by CV, IR, SEM, Visible spectrophotometer and fluorescence spectrometer of the silicon thin film growth conditions, structure, morphology and optical properties of a systematic study. The results show that only when the concentration of cetyltrimethylammonium bromide (CTAB) used in the solution for the templating agent is above its critical micelle concentration and at a certain tetraethoxysilane (TEOS) concentration, Can get island granular silicon film. It can be seen from the fluorescence spectrum that the assembled silicon film can be roasted to produce an oxygen-deficient SiOx film, where x≤2. Due to oxygen vacancies, there is 2.5 eV of photoluminescence at 3.8 eV light excitation.