本文报道了用等离子放电SiH_4+H_2+H_2O混合气体淀积的氢化非晶硅氧合金膜,均匀、致密、耐腐蚀、半绝缘、电中性、富含氢,是较理想的半导体器件表面钝化膜.兼有SiO_2和a-Si_2H的优点,而又克服了它们各自的缺点.用氢化非晶硅氧合金膜钝化平面晶体管,不仅明显地改善了小电流放大系数,而且放在盐水里浸几个小时后,特性不变. This paper reports the hydrogenated amorphous silicon-oxygen alloy films deposited by the plasma discharge SiH 4 + H 2 + H 2 O mixed gas, which are uniform, dense, corrosion-resistant, semi-insulating, neutral and hydrogen- Film.It has both the advantages of SiO_2 and a-Si_2H, but also overcome their respective shortcomings.The passivation of planar transistors with hydrogenated amorphous silicon-oxygen film not only significantly improves the small current amplification factor, but also in the brine After a few hours immersion, the same characteristics.