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提出了一种克服外界缓变物理量（如温度）对半导体型脉冲传感器影响的电压跟随比较法．与传统的电压直接比较法相比，该方法只跟随传感器触发的正弦波原始信号的变化趋势，与外界缓变物理量温度等的变化无关；然后整形成矩形彼，有效地消除了温度漂移的影响，提高了传感器的稳定性．此外，还分析了信号处理电路中各参数的选取及注意事项等．
A voltage follow-up comparison method is proposed to overcome the influence of the external gradual change of physical quantity (such as temperature) on the semiconductor type pulse sensor. Compared with the traditional voltage direct comparison method, this method only follows the trend of the original signal of the sine wave triggered by the sensor and has nothing to do with the change of the physical temperature and temperature of the outside world. Then the rectangle is shaped to effectively eliminate the influence of temperature drift, Improve the stability of the sensor. In addition, the signal processing circuit also analyzes the selection of parameters and precautions.