据日本《O Plus E》杂志1991年第136期报道,日本科学技术厅金属材料技术研究所利用量子阱开发高性能半导体激光器.从下年度五年计划开始.该研究所采用独创的液滴外延法制作化合物半导体的超微晶体,使电子处在这种立体空间内,目标是实现振荡频率很低的相干半导体激光器.新一代电子器件是一种量子化功能器件,在超高速、大容量的信息通信中是不可缺少的,其目标是实现先进的相干光通信. According to Japan’s “O Plus E” magazine in 1991 No. 136 reported that the Japan Science and Technology Agency Metal Materials Technology Research Institute using quantum wells to develop high-performance semiconductor lasers from the next five-year plan to start the Institute uses the original droplet epitaxy The law makes the ultrafine crystal of the compound semiconductor, the electron is in this three-dimensional space, the goal is to realize the low frequency of oscillation of the coherent semiconductor laser.New generation of electronic devices is a kind of quantumization function device, in ultra-fast, large capacity Information communication is indispensable, the goal is to achieve advanced coherent optical communications.