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阻变式存储器(resistive random access memory,RRAM)是以材料的电阻在外加电场作用下可在高阻态和低阻态之间实现可逆转换为基础的一类前瞻性下一代非挥发存储器.它具有在32nm节点及以下取代现有主流Flash存储器的潜力,成为目前新型存储器的一个重要研究方向.但阻变式存储器的电阴转变机理不明确,制约它的进一步研发与应用.文章对阻变式存储器的体材料中几种基本电荷输运机制进行了归纳,总结了目前对阻变式存储器存储机理的理论模型.
Resistive random access memory (RRAM) is a type of forward-looking, next-generation nonvolatile memory based on the material’s resistance reversible conversion between high and low resistance states under an applied electric field. Has the potential to replace the existing mainstream flash memory at 32nm nodes and below, and becomes an important research direction of new type of memory at present.However, the mechanism of the electromechanical transition of resistive memory is not clear, which restricts its further development and application. Several basic charge transport mechanisms in bulk materials are summarized, and the theoretical models for the storage mechanism of resistive variable memory are summarized.