开管汽相迁移已经在Pb_(1-x)Sn_xTe(100)面衬底上面生长Pb_(1-x)Sn_xTe 外延膜。就表面光滑度和电气特性这两方面而论,原生长的膜适于制作探测器列阵。所利用的料源组分从过量1%金属到过量1%碲。所实现的生长速度为每小时高达3—4微米。原生长外延膜的载流子浓度在3×10~(16)厘米~(-3)——3×10~(17)厘米~(-3)范围内,与生长温度和料源组分有关。在未经表面处理的原生长的薄膜上面制作的带有半透明电极的肖脱基(Schottky)势垒探测器。20—40 Open Tube Vapor Phase Transitions Pb_ (1-x) Sn_xTe epitaxial films have been grown on top of Pb_ (1-x) Sn_xTe (100) In terms of surface smoothness and electrical properties, the grown films are suitable for making detector arrays. The source material components used are from 1% excess metal to 1% excess tellurium. Achieved growth rate of up to 3-4 microns per hour. The carrier growth of the original growth epitaxial film is in the range of 3 × 10 ~ (16) cm -3 -3 × 10 ~ (17) cm -3, which is related to the growth temperature and the source component . Schottky barrier detectors with semitransparent electrodes fabricated on top of un-treated, virgin film. 20-40