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研究了沟长从 0 .5 2 5 μm到 1.0 2 5 μm9nm厚的 P- MOSFETs在关态应力 ( Vgs=0 ,Vds<0 )下的热载流子效应 .讨论了开态和关态应力 .结果发现由于在漏端附近存在电荷注入 ,关态漏电流在较高的应力后会减小 .但是低场应力后关态漏电流会增加 ,这是由于新生界面态的作用 .结果还发现开态饱和电流和阈值电压在关态应力后变化很明显 ,这是由于栅漏交叠处的电荷注入和应力产生的界面态的影响 .Idsat的退化可以用函数栅电流 ( Ig)乘以注入的栅氧化层电荷数 ( Qinj)的幂函数表达 .最后给出了基于 Idsat退化的寿命预测模型
The effect of hot carriers on the off-state stress (Vgs = 0, Vds <0) of p-MOSFETs with trench lengths from 0.525 μm to 1.025 μm was studied. The effects of on-state and off-state stress The results show that the off-state leakage current decreases at higher stress due to charge injection near the drain terminal, but the off-state leakage current increases at low field stress due to the interfacial effect of the nascent interface. The on-state saturation current and the threshold voltage change significantly after the off-state stress due to the influence of the charge injection and the interface state of the stress at the overlap of the gate and drain. The degradation of Idsat can be calculated by multiplying the function gate current (Ig) Of the gate oxide charge (Qinj) power function expression.Finally, Idsat regression-based life prediction model