半导体器件用的硅单晶,通常是在直拉或区熔时从外部引入杂质制备的,即在硅单晶体生长时掺入所需杂质.因此,在掺杂时,由于杂质在硅中的分凝效应,导致掺入杂质分布的不均匀,再加上拉晶工艺因素的影响,使硅单晶产生杂质条纹等缺陷,使单晶在轴向和径向都会有较大的掺杂分布起伏,导致单晶电阻率的非均匀性.对大直径、高电阻率的硅单晶电阻率的不均匀性更为突出.硅压阻传感器对硅单晶电阻率的均匀性同样有较高的要求,如果原始单晶电阻率均匀性 Silicon single crystals for semiconductor devices are usually prepared by introducing impurities from the outside at the time of Czochralski or zone melting, that is, when a silicon single crystal is grown, the desired impurities are doped. Therefore, when doping, impurities Condensation effect, resulting in the incorporation of impurities in the uneven distribution, coupled with the pulling process factors, the silicon single crystal defects such as impurity stripes so that the single crystal in the axial and radial will have a larger doping distribution fluctuations , Resulting in non-uniform single-crystal resistivity of the large diameter, high resistivity of silicon single-crystal resistivity inhomogeneity is even more prominent. Silicon piezoresistive sensor silicon single crystal resistivity uniformity is also higher Requirements, if the original single crystal resistivity uniformity