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据SemiconductorReporter网站报道,IMEC(TheInteruniversityMicroelectronicsCenter)近期宣布,通过新型的金属有机物化学气相外延(MOVPE)系统,生产出具有低电阻率AlGaN/GaN外延层的150mm硅圆片。这种材料将可以用于制作高电子迁移率晶体管(HEMT),包括服务于高频段的低功耗GaN器
According to a report from SemiconductorReporter, IMEC (The University Microelectronics Center) recently announced the production of a 150mm silicon wafer with a low resistivity AlGaN / GaN epitaxial layer using the new MOVPE system. This material will be used to fabricate high electron mobility transistors (HEMTs), including low-power GaN devices for high-band applications