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分析了 Si1- x- y Gex Cy 三元系材料外延生长的特点 ,指出原子性质上的巨大差异使 Si1- x- yGex Cy 材料的制备比较困难 .固相外延生长是制备 Si1- x- y Gex Cy 的有效方法 ,但必须对制备过程各环节的条件进行优化选择 .通过实验系统地研究了离子注入过程中温度条件的控制对外延层质量的影响以及外延退火条件的选择与外延层结晶质量的关系 .指出在液氮温度下进行离子注入能够提高晶体质量 ,而注入过程中靶温过高会导致动态退火效应 ,影响以后的再结晶过程 .采用两步退火方法有利于消除注入引入的点缺陷 ,而二次外延退火存在着一个最佳退火温区 .在此基础上优化得出了固相外延方法制备 Si1- x- y Gex Cy/Si材料的最佳条件 .
The characteristics of epitaxial growth of Si1-x-y Gex Cy ternary materials were analyzed, and the great differences in atomic properties made it difficult to prepare Si1-x-yGex Cy materials. Cy, but must optimize the conditions of the various stages of the preparation process.Through experiments systematically studied the impact of temperature control during the ion implantation process on the quality of the epitaxial layer and the choice of epitaxial annealing conditions and the quality of the epitaxial layer crystallization It is pointed out that the ion implantation can enhance the crystal quality at the liquid nitrogen temperature and the high target temperature during the injection can lead to the dynamic annealing effect and affect the subsequent recrystallization process.The two-step annealing method is helpful to eliminate the point defects , And there exists an optimum annealing temperature zone for the second epitaxial annealing.Optimized the optimum conditions for the preparation of Si1-x-y Gex Cy / Si by solid-state epitaxy.