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将注入磷的n型Hg_(1-x)Cd_xTe(x=0.29)快速退火,制成敏感红外辐射(3.5～5μm)的p~(+n)光电二极管。用连续波CO_2激光器产生的光子,加热试样十分之几秒(在～380℃加热0.1秒),实现辐射损伤退火。
The phosphorus-doped n-type Hg 1-x Cd x Te (x = 0.29) was rapidly annealed to make p ~ (+ n) photodiode with sensitive infrared radiation (3.5 ~ 5μm). With continuous wave CO_2 laser photons, the sample is heated for a few tenths of a second (at ~ 380 ° C for 0.1 second) to achieve a radiation damage anneal.