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回顾了在高温条件下AlGaN/GaN HEMT器件特性的研究进展。发现2DEG的高温特性是影响器件高温性能的根本内在因素,且外延材料的缺陷、衬底及其器件的封装形式也影响器件的高温特性。最后总结了适合高温下工作的AlGaN/GaN HEMT的改进方法。
The research progress of AlGaN / GaN HEMT devices under high temperature is reviewed. It is found that the high temperature characteristic of 2DEG is the fundamental intrinsic factor that affects the high temperature performance of the device, and the defects of the epitaxial material and the package form of the substrate and the device also affect the high temperature characteristics of the device. Finally, an improved method of AlGaN / GaN HEMT suitable for high temperature operation is summarized.