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文章针对器件的位移损伤效应,利用质子加速器产生的质子及反应堆中子对化合物器件和硅器件位移损伤进行试验研究,得到了GaAs光电耦合器的电流传输比(CTR)和硅晶体管电流增益hFE的退化率随等效剂量的变化规律。研究结果表明,在质子70 MeV以上高能量范围,对于硅器件适用的位移损伤等效原理对于GaAs化合物器件则不再适用,需要修正。根据试验数据,给出了经验的修正系数。
Aiming at the displacement damage effect of the device, the proton and the reactor neutrons produced by the proton accelerator are used to study the displacement and damage of the device and the silicon device. The current transfer ratio (CTR) of the GaAs photocoupler and the current gain of the silicon transistor hFE Degradation rate changes with the equivalent dose. The results show that the equivalent damage displacement principle applied to silicon devices is no longer suitable for GaAs devices at proton high energies above 70 MeV and needs to be corrected. Based on the experimental data, empirical correction coefficients are given.