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Titanium nitride (TiN) films with nanostructure were prepared at ambient temperature on a (111) silicon sub- strate by the filtered cathodic arc plasma (FCAP) technology with an in-plane “S” filter. The effects of deposition parame- ters on the grain size, texture and nano-hardness of the films were systematically investigated. The grain size was obtained through calculation using the Scherrer formula and observed by TEM. The results of X-ray diffraction and electron diffrac- tion indicated that increasing either negative substrate bias or argon flow promoted the formation of (111) preferred orienta- tion. High argon flow leads to biaxial texture. The micro-hardness of the TiN films as a function of grain size showed a be- havior according to the Hall-Petch relation under high argon flow.
Titanium nitride (TiN) films with nanostructure were prepared at ambient temperature on a (111) silicon sub- strate by the filtered cathodic arc plasma (FCAP) technology with an in-plane “S” filter. The effects of deposition parameters the grain size, texture and nano-hardness of the films were systematically investigated. The grain size was obtained through calculation using the Scherrer formula and observed by TEM. The results of X-ray diffraction and electron diffrac tion indicate that increasing either negative substrate bias or argon flow promoted the formation of (111) preferred orientation- tion. High micro flow rate to biaxial texture. The micro-hardness of the TiN films as a function of grain size showed a be-havior according to the Hall-Petch relation under high argon flow.