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据日本《O Plus E》1990年第127期报道,日本富士通研究所最早制成用1个原子的厚度重叠不同种类化合物半导体的“单原子层超晶格”.若重叠1个原子或几个原子厚度的单晶
According to Japan’s “O Plus E” No. 127 in 1990 reported that Japan’s Fujitsu Institute first made with a thickness of atoms overlapping different types of compound semiconductor “single atomic layer superlattice.” If the overlap of 1 atom or a few Atomic thickness of the single crystal