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通过液相化学反应制备了高质量硒(Se)纳米线,同时以Se纳米线为模板,合成了Cu2Se纳米线。利用透射电镜(TEM)、高分辨透射电镜(HRTEM)以及X射线衍射仪(XRD)研究了纳米线的形貌结构特征。结果显示,Se纳米线为单晶结构,生长方向沿其[001]面。结合先进的光刻技术及磁控溅射,成功制备了Se和Cu2Se纳米电子学器件。初步测试表明,这种Se纳米线为p型半导体,而Cu2Se纳米线则表现出明显的相变行为。这些发现有利于开发纳米线场效应晶体管以及相变存储器件方面的应用。
High-quality selenium (Se) nanowires were prepared by liquid-phase chemical reaction, and Cu2Se nanowires were synthesized by using Se nanowires as template. The morphology of nanowires was characterized by transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD). The results show that the Se nanowires have a single crystal structure and grow along the [001] plane. Combined with advanced lithography and magnetron sputtering, Se and Cu2Se nanoelectronics devices were successfully fabricated. Preliminary tests show that the Se nanowires are p-type semiconductors, while Cu2Se nanowires exhibit significant phase transition behavior. These findings are conducive to the development of nanowire field effect transistors and phase change memory devices.