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在较高频率下,场效应晶体管的栅噪声随频率的上升迅速增加。这种影响可以归结为导电沟道的热噪声,是由沟道和栅间的电容耦合引起的。这种噪声可以分别由栅和漏的噪声电流发生器 i_g 和 i_d 表示;发展了一种对于中高频计算 i_g~2、i_d~2和(?)的近似方法。i_g 和 i_d 的相关系数是个虚数,且在饱和条件下其值约为0.40j。i_g~2可以由噪声电阻 R_n 和栅一源电容 C_g,表示。已经证明,相关系数仅微弱地影响噪声系数 F,而(F_(min)-1)在宽频范围内随ωC_(g3)R_n 变化。
At higher frequencies, the gate noise of field-effect transistors increases rapidly with increasing frequency. This effect can be attributed to the conductive channel thermal noise, is caused by the capacitive coupling between the channel and the gate. This noise can be represented by the gate and drain noise current generators, i_g and i_d, respectively; an approximation method has been developed for calculating i_g ~ 2, i_d ~ 2 and (?) For medium and high frequencies. The correlation coefficient between i_g and i_d is an imaginary number, and its value under saturation is about 0.40j. i_g ~ 2 can be represented by the noise resistor R_n and the gate-source capacitance C_g. It has been shown that the correlation coefficient only slightly affects the noise figure F, whereas (F min (-1)) varies with ωC g3 R n over a wide frequency range.