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在可商业获得的单晶 6 H- Si C晶片上 ,通过化学气相淀积 ,进行同质外延生长 ;并在此 6 H - Si C结构材料上 ,利用反应离子刻蚀和接触合金化技术 ,制作台面 pn结二极管 .详细测量并分析了器件的电学特性 ,测量结果表明此 6 H - Si C二极管在室温、空气介质中 ,- 10 V时 ,漏电流密度为 2 .4× 10 - 8A/cm2 ,在反向电压低于 6 0 0 V及接近30 0℃高温下都具有良好的整流特性 .
Homogeneous epitaxial growth was carried out on the commercially available single crystal 6 H-Si C wafer by chemical vapor deposition; and on this 6 H - Si C structure material, by using reactive ion etching and contact alloying techniques, The measurement results show that the leakage current density of this 6 H - Si C diode at room temperature, -10 V in air medium is 2.4 × 10 -8 A / cm2, and has good rectification characteristics when the reverse voltage is lower than 600 V and close to the high temperature of 300 ° C.