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报道了Si衬底上分子束外延(MBE)生长渐变折射率分别限制异质结构GaAs/AlGaAs单量子阱激光器的实验研究结果。室温下脉冲激射阈值电流约500mA,77K最小脉冲激射阈值电流为20mA。
The experimental results of a GaAs / AlGaAs single quantum well laser with a graded index of refraction in the growth of molecular beam epitaxy (MBE) on Si substrate were reported respectively. The pulsed lasing threshold current is about 500mA at room temperature and the 77K minimum pulsed lasing threshold current is 20mA.