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首次在透射电子显微镜下观察到渗钒层过渡区的形貌,并对过渡区进行了成分分析。发现渗钒层中钒碳化合物晶粒直接生长在基体上面,两者之间有明显的界限,界面两侧元素发生少量互扩散并产生了硅的富集。
For the first time, the morphologies of the transition zone of vanadia were observed under transmission electron microscope, and the composition of the transition zone was analyzed. It is found that the vanadium-carbon crystal grains in the vanadizing layer grow directly on the substrate, and there is a clear boundary between them. A small amount of inter-diffusion of elements on both sides of the interface leads to the enrichment of silicon.