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采用不同共聚比例的 9,9-二辛基芴和硒吩的共聚物制备了发光二极管 ,研究了不同硒吩含量对器件性能的影响。针对共聚物的特点和器件存在的问题 ,采用阴极界面修饰及高分子共混的方法 ,使器件的性能得以提高
Light-Emitting Diodes (LEDs) were prepared by copolymerization of 9,9-dioctylfluorene and selenophene with different copolymerization ratios. The effects of different selenophene contents on the device performance were investigated. According to the characteristics of the copolymer and the problems of the device, the performance of the device is improved by the method of cathode interface modification and polymer blending