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针对1.9GHzPHS和DECT无线接入系统的应用,提出了一种可工作于1.2V电压的基于源级电感负反馈共源共栅结构而改进的CMOS低噪声放大器,并对其电路结构、噪声及线性特性等主要性能进行分析。并与传统的低噪声放大器进行对比,该电路采用两级放大结构,通过加入电容和电感负反馈可以分别实现低功耗约束下的噪声优化和高的线性度。采用TSMC0.18μm CMOS工艺模型设计与验证,实验结果表明:该低噪声放大器能很好满足要求,且具有1.4dB的噪声系数和好的线性度,输入1dB压缩点-7.8dBm,增益11dB,功耗11mW。
Aiming at the application of 1.9GHzPHS and DECT wireless access system, a CMOS low noise amplifier based on the source inductor negative feedback cascode structure which can work at 1.2V voltage is proposed. Its circuit structure, noise and Linear characteristics of the main performance analysis. Compared with the traditional low-noise amplifier, the circuit adopts two-stage amplification structure, and the noise optimization and high linearity under the low power consumption constraint can be realized respectively by adding the capacitor and the negative feedback of the inductor. The design and verification of the TSMC0.18μm CMOS process model are carried out. The experimental results show that the LNA can meet the requirements and has a noise figure of 1.4dB and a good linearity. The input 1dB compression point is -7.8dBm, the gain is 11dB, Consumption 11mW.