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ＹＳＺ栅ＭＯＳ氧传感器是一种新型的氧敏器件，它是通过在场效应晶体管的绝缘栅上沉积一薄层ＹＳＺ制成，本文介绍这种传感器的响应机理，讨论ＹＳＺ固体电解质的晶体结构对电导率的影响，给出微观分析结果和对时间的迅速响应特性。
YSZ Gate MOS Oxygen Sensor is a new type of oxygen sensor, which is made by depositing a thin layer of YSZ on the insulated gate of a field-effect transistor. This paper describes the response mechanism of this sensor and discusses the crystal structure of YSZ solid electrolyte. Rate of impact, given the results of micro-analysis and the rapid response time characteristics.